On February 2nd, the third-generation semiconductor materials represented by silicon carbide (SiC) are the driving factors and important guarantees for the transformation and upgrading of China’s manufacturing industry. The reporter learned from the Institute of Microelectronics of the Chinese Academy of Sciences that China has successfully verified the first domestic silicon carbide (SiC) power device in space, and the third-generation semiconductor materials are expected to drive the upgrading of China’s aerospace power supply. According to Liu Xinyu, a researcher at the Institute of Microelectronics, Chinese Academy of Sciences, power devices are the core of power conversion and control, known as the “heart of power electronic systems”, and are one of the most basic and widely used devices. As the performance of silicon-based power devices approaches their limits, third-generation semiconductor materials represented by silicon carbide (SiC), with their unique advantages, can meet the high energy efficiency, miniaturization, and lightweight needs of space power systems, and have important strategic significance for the development of new generation aerospace technology. Industry experts believe that China’s successful verification of power devices made from third-generation semiconductor materials in space signifies that under the demand for space payloads measured in grams, silicon carbide (SiC) power devices are expected to drive the upgrade and replacement of space power systems, providing a new generation of power devices for China’s future lunar exploration projects, manned moon landing, deep space exploration, and other fields. Xinhua News Agency
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